Analysis and Design of MOSFETs Modeling, Simulation, and Parameter Extraction

Auteur: J.J. Liou
Taal: Engels
Analysis and Design of MOSFETs
  • Engels
  • Hardcover
  • 9780412146015
  • Druk: 1998 ed.
  • september 1998
  • 349 pagina's
Alle productspecificaties

Samenvatting

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Productspecificaties

Inhoud

Taal
Engels
Bindwijze
Hardcover
Druk
1998 ed.
Verschijningsdatum
1998-09-01
Aantal pagina's
349 pagina's
Illustraties
Nee

Betrokkenen

Auteur
J.J. Liou Adelmo Ortiz-Conde
Co-auteur
Adelmo Ortiz-Conde
Uitgever
Chapman And Hall

EAN

EAN
9780412146015

Overige kenmerken

Extra groot lettertype
Nee
NUR code
950
Oorspronkelijke releasedatum
1998-09-01
Subtitel
Modeling, Simulation, and Parameter Extraction
Thema Subject Code
TJFC

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