Semiconductor Power Devices Physics, Characteristics, Reliability

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  • Engels
  • Hardcover
  • 9783319709161
  • 28 februari 2018
  • 714 pagina's
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Samenvatting

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology.



This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.

This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

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Inhoud

Taal
en
Bindwijze
Hardcover
Oorspronkelijke releasedatum
28 februari 2018
Aantal pagina's
714
Illustraties
Nee

Betrokkenen

Hoofdauteur
Josef Lutz
Tweede Auteur
Heinrich Schlangenotto
Co Auteur
Uwe Scheuermann

Vertaling

Originele titel
Halbleiter-Leistungsbauelemente

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Editie
2
Extra groot lettertype
Nee
Product breedte
155 mm
Product lengte
235 mm
Studieboek
Ja
Verpakking breedte
155 mm
Verpakking hoogte
40 mm
Verpakking lengte
235 mm
Verpakkingsgewicht
1262 g

EAN

EAN
9783319709161
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